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Wafer

  • TypeP
    Dopant Boron
    Size 125*125 ± 0.5mm, 156*156 ± 0.5mm
    Thickness 200 ± 20 µ m
    Resistivity 1~3 Ω .cm 3~6 Ω .cm
    Life time ≥ 10 µ s
    Orientation <100> ± 3°
    Cutting Multiple wire cut
    TTV ≤ 20 µ m
    Perpendicularity 90° ± 0.5°
    Dislocation density ≤3000cm-2
    Oxygen content ≤1.0*1018 cm-3
    Carbon content ≤5.0*1016 cm-3
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