简体中文
|
Deutsch
|
Español
|
Italiano
|
Français
|
日本語
Home
About Us
Products
Projects
Press Release
Join Us
Contact Us
Ingot
Wafer
Cells
Modules
Mono-crystalline PV modules
Poly-crystalline modules
System
Product Certificates
Customer Service
Home
>>
Products
>> Wafer
Type
P
Dopant
Boron
Size
125*125 ± 0.5mm, 156*156 ± 0.5mm
Thickness
200 ± 20 µ m
Resistivity
1~3 Ω .cm 3~6 Ω .cm
Life time
≥ 10 µ s
Orientation
<100> ± 3°
Cutting
Multiple wire cut
TTV
≤ 20 µ m
Perpendicularity
90° ± 0.5°
Dislocation density
≤3000cm
-2
Oxygen content
≤1.0*10
18
cm
-3
Carbon content
≤5.0*10
16
cm
-3
Download details